• HOME
  • NEWS
  • EXPLORE
    • CAREER
      • Companies
      • Jobs
    • EVENTS
    • iGEM
      • News
      • Team
    • PHOTOS
    • VIDEO
    • WIKI
  • BLOG
  • COMMUNITY
    • FACEBOOK
    • INSTAGRAM
    • TWITTER
  • CONTACT US
Tuesday, March 21, 2023
BIOENGINEER.ORG
No Result
View All Result
  • Login
  • HOME
  • NEWS
  • EXPLORE
    • CAREER
      • Companies
      • Jobs
        • Lecturer
        • PhD Studentship
        • Postdoc
        • Research Assistant
    • EVENTS
    • iGEM
      • News
      • Team
    • PHOTOS
    • VIDEO
    • WIKI
  • BLOG
  • COMMUNITY
    • FACEBOOK
    • INSTAGRAM
    • TWITTER
  • CONTACT US
  • HOME
  • NEWS
  • EXPLORE
    • CAREER
      • Companies
      • Jobs
        • Lecturer
        • PhD Studentship
        • Postdoc
        • Research Assistant
    • EVENTS
    • iGEM
      • News
      • Team
    • PHOTOS
    • VIDEO
    • WIKI
  • BLOG
  • COMMUNITY
    • FACEBOOK
    • INSTAGRAM
    • TWITTER
  • CONTACT US
No Result
View All Result
Bioengineer.org
No Result
View All Result
Home NEWS Science News

3-D solutions to energy savings in silicon power transistors

Bioengineer by Bioengineer
December 5, 2016
in Science News
Reading Time: 2 mins read
0
Share on FacebookShare on TwitterShare on LinkedinShare on RedditShare on Telegram
IMAGE

Credit: Tokyo Institute of Technology

In electronics, lower power consumption leads to operation cost savings, environmental benefits and the convenience advantages from longer running devices. While progress in energy efficiencies has been reported with alternative materials such as SiC and GaN, energy-savings in the standard inexpensive and widely used silicon devices are still keenly sought. K Tsutsui at Tokyo Institute of Technology and colleagues in Japan have now shown that by scaling down size parameters in all three dimensions their device they can achieve significant energy savings.

Tsutsui and colleagues studied silicon insulated gate bipolar transistors (IGBTs), a fast-operating switch that features in a number of every day appliances. While the efficiency of IGBTs is good, reducing the ON resistance, or the voltage from collector to emitter required for saturation (Vce(sat)), could help increase the energy efficiency of these devices further.

Previous investigations have highlighted that increases in the "injection enhancement (IE) effect", which give rise to more charge carriers, leads to a reduction in Vce(sat). Although this has been achieved by reducing the mesa width in the device structure, the mesa resistance was thereby increased as well. Reducing the mesa height could help counter the increased resistance but is prone to impeding the (IE) effect. Instead the researchers reduced the mesa width, gate length, and the oxide thickness in the MOSFET to increase the IE effect and so reduce Vce(sat) from 1.70 to 1.26 V. With these alterations the researchers also used a reduced gate voltage, which has advantages for CMOS integration.

They conclude, "It was experimentally confirmed for the first time that significant Vce(sat) reduction can be achieved by scaling the IGBT both in the lateral and vertical dimensions with a decrease in the gate voltage."

###

Background

Insulated gate bipolar transistors (IGBTs)

These are three terminal devices used as switches or rectifiers. With simple gate-drive characteristics and high-current and low-saturation-voltage capabilities they combine the benefits of two other types of transistors – metal-oxide-semiconductor field effect transistors (MOSFETs) and bipolar transistors.

3D scaling of IGBTs

The researchers reduced the mesa width, gate length, and the oxide thickness in the MOSFET by a factor of 1/k, and compared devices with values of 1 and 3 for k. Because the fabrication of narrow mesas can cause problems they also reduced the trench depth by 1/k. Although this has a slightly negative effect on the IE effect, it has considerable benefits for fabrication ease and cost and the dependence of (Vce(sat)) on the trench depth was deemed to be small. The gate voltage was also decreased by a factor of 1/k, while the cell pitch was maintained at 16 μm.

Media Contact

Emiko Kawaguchi
[email protected]
81-357-342-975

http://www.titech.ac.jp/english/index.html

############

Story Source: Materials provided by Scienmag

Share12Tweet8Share2ShareShareShare2

Related Posts

Image analysis

A new view of microscopic processes

March 21, 2023
Morocco, Africa

Forests reduce health risks, new global report confirms

March 21, 2023

Study confirms nitrate can release uranium into groundwater

March 21, 2023

A new and efficient particle resuspension prediction model based on quasi-static moment equilibrium

March 21, 2023
Please login to join discussion

POPULAR NEWS

  • ChatPandaGPT

    Insilico Medicine brings AI-powered “ChatPandaGPT” to its target discovery platform

    62 shares
    Share 25 Tweet 16
  • Northern and southern resident orcas hunt differently, which may help explain the decline of southern orcas

    44 shares
    Share 18 Tweet 11
  • Skipping breakfast may compromise the immune system

    42 shares
    Share 17 Tweet 11
  • Insular dwarfs and giants more likely to go extinct

    35 shares
    Share 14 Tweet 9

About

We bring you the latest biotechnology news from best research centers and universities around the world. Check our website.

Follow us

Recent News

A new view of microscopic processes

Forests reduce health risks, new global report confirms

Study confirms nitrate can release uranium into groundwater

Subscribe to Blog via Email

Enter your email address to subscribe to this blog and receive notifications of new posts by email.

Join 48 other subscribers
  • Contact Us

Bioengineer.org © Copyright 2023 All Rights Reserved.

No Result
View All Result
  • Homepages
    • Home Page 1
    • Home Page 2
  • News
  • National
  • Business
  • Health
  • Lifestyle
  • Science

Bioengineer.org © Copyright 2023 All Rights Reserved.

Welcome Back!

Login to your account below

Forgotten Password?

Retrieve your password

Please enter your username or email address to reset your password.

Log In