As the silicon semiconductor industry faces unprecedented challenges related to the scaling limits of conventional materials, researchers are turning their attention to revolutionary two-dimensional (2D) materials. These materials not only offer a path to continued downscaling of transistor dimensions but also exhibit unique physical properties that can lead to enhanced device performance. Among these 2D materials, molybdenum disulfide (MoS₂) has emerged as a leading candidate, thanks to its excellent electrical characteristics, mechanical flexibility, and compatibility with existing semiconductor fabrication techniques.
The recent advances in 2D transistor technology are driven by innovations in several pivotal areas. One of the most significant breakthroughs has been in contact engineering, where researchers are making strides in minimizing contact resistance at the interface between the metal contacts and the 2D semiconductor. This is a crucial factor because high contact resistances can severely diminish the performance of scaled transistors. In conjunction with this, the scaling of channel lengths (L_CH) has been achieved to unprecedented levels, making it possible to fabricate transistors that are not only smaller but also more efficient.
The effective integration of high-κ gate dielectrics has further bolstered transistor performance. By reducing the equivalent oxide thickness (EOT) to less than 2.5 nm, researchers are able to enhance gate control over the channel, significantly lowering off-state leakage currents. Traditionally, negative threshold voltage values in 2D materials have posed a challenge, leading to undesirable off-state currents. However, recent developments have made it possible to engineer positive threshold voltages while keeping off-state currents below the critical threshold of 10 pA µm⁻¹.
A growing body of literature suggests that a monolayer-centric approach may not fully harness the advantages of few-layer materials. By shifting focus to bilayer and trilayer MoS₂ transistors, researchers have observed performance improvements that could reshape the landscape of semiconductor technology. In particular, trilayer MoS₂ transistors are showing remarkable enhancements in terms of on-state current and lower Schottky barrier heights. The ability to fine-tune the channel thickness allows for better charge transport properties and reduced scattering, leading to superior electrical performance.
Recent findings highlight the manufacturing feasibility of scaling MoS₂ transistors down to impressive dimensions of 35 nm for channel length and 30 nm for contact length. This level of scaling is not merely an academic pursuit; it has implications for real-world applications in ultra-low-power electronics. The achievement of approximately 1,000 scaled devices demonstrates the reliability and reproducibility of the approach, which is crucial for transitioning from lab-scale prototypes to industry-ready solutions.
This intensive research effort culminated in the successful fabrication of MoS₂ transistors that operate with on-state currents reaching 220 µA µm⁻¹. Notably, these devices achieve a positive threshold voltage, which facilitates design considerations for future applications in logic and memory technologies. When compared to their monolayer counterparts, trilayer MoS₂ devices provide a compelling alternative that combines the benefits of increased channel thickness with minimized resistance.
As momentum builds in the field of 2D materials, the questions about scalability, integration, and performance become increasingly relevant. Researchers and engineers are now tasked with understanding how to optimize the balance between these parameters to achieve the vision of next-generation transistors. The versatility of few-layer MoS₂ can potentially revolutionize applications in areas such as flexible electronics, high-frequency devices, and even optoelectronics.
While challenges remain in the form of contact resistance and the integration of high-quality dielectrics, the advancements made to date suggest a paradigm shift in how we conceptualize transistor structures. The continuous exploration of the properties of MoS₂ is paving the way for devices that can outperform traditional silicon-based technologies. This shift not only promises to address the scaling limits of silicon but also opens up new avenues for innovation in the tech industry.
Another area of investigation involves the long-term stability and reliability of MoS₂ transistors. As electronic devices become increasingly complex and performance-driven, ensuring that these 2D materials can withstand environmental stresses is essential. The progress seen in achieving reproducible device yields suggests that stability will not be a significant hindrance in the deployment of these transistors on a commercial scale.
The implications of this research extend beyond mere academic interest; the quest for new materials is driven by the industry’s need for more efficient, compact, and sustainable solutions. The use of MoS₂ could potentially lead to reduced energy consumption and lower operational costs, which are paramount concerns for manufacturers. Furthermore, the adoption of scalable fabrication techniques compatible with existing processes enhances the viability of transitioning from research to commercial production.
As this research continues to unfold, it will undoubtedly influence the design paradigms and material choices in semiconductor fabrication. The interplay between material properties, device architecture, and processing techniques remains a critical focus for researchers aiming to realize the full potential of 2D materials in commercial electronics. The future of the semiconductor industry may well be shaped by the innovations stemming from the study of materials like molybdenum disulfide.
The quest for ever-smaller, higher-performing electronic components continues unabated. With the successful demonstration of low-dimensional materials like MoS₂, the groundwork has been laid for further exploration of similar compounds and structures. The technology not only challenges the status quo but invites an entire generation of scientists and engineers to rethink and redesign the fundamentals of electronic circuitry for an era defined by miniaturization and efficiency.
With the convergence of material science, electrical engineering, and nanotechnology, the horizon for 2D materials like MoS₂ looks promising. This research not only represents a step forward in addressing the limitations of silicon-based technology but also serves as a beacon for future investigations into advanced materials that could redefine industry standards.
In conclusion, the development of high-performance molybdenum disulfide transistors with channel and contact lengths less than 35 nm showcases the tremendous potential of 2D materials. Their unique properties and ability to integrate with existing semiconductor technologies make them a compelling candidate for the future of electronics, promising performance enhancements that could enable more powerful, compact, and efficient devices. As research progresses, the possibilities for the application of MoS₂ and other 2D materials seem limitless, ushering in a new chapter in the evolution of semiconductor technology.
Subject of Research: Molybdenum disulfide transistors
Article Title: High-performance molybdenum disulfide transistors with channel and contact lengths below 35 nm.
Article References:
Sakib, N.U., Chen, C., Ding, L. et al. High-performance molybdenum disulfide transistors with channel and contact lengths below 35 nm.
Nat Electron (2025). https://doi.org/10.1038/s41928-025-01499-8
Image Credits: AI Generated
DOI: https://doi.org/10.1038/s41928-025-01499-8
Keywords: Molybdenum disulfide, Transistors, Two-dimensional materials, Semiconductor technology, Miniaturization, Contact engineering, High-κ dielectrics, On-state current, Electrical performance, Scalable fabrication.
Tags: 2D materials in electronicscontact engineering in transistorsenhancing device performance with 2D materialsequivalent oxide thickness in semiconductorsfuture of nano-scale transistorshigh-performance semiconductor technologyhigh-κ gate dielectrics in transistorsinnovations in transistor fabricationmechanical flexibility of MoS₂molybdenum disulfide transistorsreducing contact resistance in electronicsscaling limits of silicon semiconductors
