In the relentless pursuit of sustainable and efficient photovoltaic technologies, researchers have long wrestled with the inherent limitations posed by atomic disorder in multi-element crystalline materials. Among these, copper zinc tin sulfide selenide (Cu₂ZnSn(S,Se)₄, or CZTSSe) has emerged as a promising candidate for next-generation thin-film solar cells due to its earth-abundant constituents and favorable optoelectronic properties. However, the performance ceiling of CZTSSe devices has been persistently plagued by the pervasive issue of atomic disorder, particularly the cation disorder between copper and zinc atoms. This atomic-level irregularity introduces detrimental deep-level defects, which act as non-radiative recombination centers, severely undermining charge carrier extraction and overall device efficiency.
Unlocking the full potential of CZTSSe materials necessitates a nuanced understanding and precise control of this atomic disorder. Copper and zinc atoms exhibit a high propensity for interchange within the crystal lattice because the formation energy required to create such antisite defects is remarkably low. This phenomenon results in an undesirable high concentration of Cu–Zn disorder, ultimately limiting the material’s optoelectronic quality and the power conversion efficiency (PCE) of devices fabricated from it. The challenge has been further compounded by the conflicting requirements of thermodynamic and kinetic factors governing the disorder-to-order phase transition. While a thermodynamically driven ordering is favored at low temperatures, the kinetics of atom migration and rearrangement remains sluggish, preventing the material from reaching an optimally ordered state during standard processing.
Against this backdrop, a pioneering study recently published in Nature Energy has introduced an innovative approach to tackling this bottleneck through the strategic incorporation of magnesium atoms into the CZTSSe lattice. The researchers achieved this by doping magnesium at the surface of the CZTSSe layer, which induces additional vacancy defects. These vacancies act as kinetic facilitators allowing copper and zinc atoms to reorder more readily. By effectively lowering the energy barrier associated with the atom interchange process, this vacancy-assisted mechanism accelerates the attainment of a more ordered crystal phase with significantly reduced cation disorder.
The hallmark of this breakthrough lies not merely in its conceptual novelty but in its tangible impact on device performance. CZTSSe solar cells fabricated with magnesium doping in this study achieved a certified power conversion efficiency of 14.9%, a significant leap forward from the typical thresholds previously reported for similar materials. This figure was externally validated by the Chinese National PV Industry Measurement and Testing Center, lending substantial credibility and reinforcing the technological promise of vacancy-enhanced magnesium doping as a viable pathway for high-efficiency kesterite photovoltaics.
This research defies the traditional thermodynamic-kinetic trade-off that has long entrenched the field. Under conventional thermal annealing protocols, efforts to promote cation ordering often require prolonged processing times at elevated temperatures, risking material degradation or secondary phase formation. In contrast, magnesium doping introduces vacancy defects that act as dynamic sites facilitating atom migration without necessitating extreme thermal conditions. This approach not only shortens processing times but also stabilizes the ordered phase, creating an optimal balance between thermodynamics and kinetics.
Delving deeper into the microscopic mechanisms, the presence of magnesium perturbs the local bonding environment and lattice parameters around the doping site. This perturbation increases vacancy concentrations near the surface, which serves as nucleation centers for ordered domains. These ordered regions propagate into the bulk material as cation rearrangement ensues, ultimately reducing antisite defects that traditionally catalyze charge carrier recombination. The reduction of such defects directly correlates to enhanced charge carrier lifetimes and diminished non-radiative recombination, pivotal factors underpinning improved photovoltaic performance.
From an application standpoint, this advance validates the feasibility of defect engineering as a critical design paradigm for kesterite solar cells. The introduction of vacancies through isovalent or aliovalent doping strategies may offer a new frontier in manipulating disorder and defect landscapes in multinary semiconductors. Furthermore, this vacancy engineering principle is not limited to Mg-doping in CZTSSe but may find broader applicability in other multicomponent chalcogenides plagued by cation disorder and related recombination losses.
This work also underscores the importance of surface modification in enhancing bulk crystal properties. Surface vacancies induced by magnesium doping serve as kinetic promoters for atom rearrangement, highlighting how spatially targeted modifications can ripple through the entire material’s structural order. This insight could inspire new processing techniques that go beyond simple bulk doping, leveraging surface and interface chemistry to overcome fundamental material obstacles.
Moreover, the study utilized sophisticated characterization techniques to unambiguously correlate magnesium doping with vacancy formation and enhanced cation ordering. Advanced tools such as synchrotron-based X-ray diffraction, atom probe tomography, and high-resolution transmission electron microscopy provided direct visualization and quantification of the atomic scale effects. These experimental validations were complemented by density functional theory (DFT) calculations, which elucidated the energetics and electronic consequences of the dopant-vacancy interplay, offering a comprehensive picture of the ordering mechanism.
The implications of this achievement extend beyond material science into the realm of commercial photovoltaic manufacturing. By enabling higher efficiency CZTSSe solar cells using abundant and non-toxic elements without costly or complex fabrication adjustments, this approach promises to democratize access to affordable solar technology. It aligns strongly with global sustainability goals, capitalizing on scalable defect engineering strategies over reliance on expensive or rare materials often seen in other thin-film technologies like CIGS or perovskites.
Looking ahead, further exploration into the optimization of magnesium doping concentrations, processing parameters, and scale-up methodologies will be instrumental in translating this laboratory success into widespread industrial practice. Additionally, integration with complementary strategies such as interface passivation, bandgap tuning, and light management could propel the efficiency of CZTSSe devices even higher, approaching or surpassing benchmark technologies.
In summary, this breakthrough represents a milestone in kesterite solar cell research. By cleverly introducing magnesium-induced vacancies, researchers have unlocked a kinetic pathway to reduce cation disorder, surmounting a long-standing barrier that limited device efficiency. The resultant 14.9% certified power conversion efficiency not only signals a new horizon in earth-abundant photovoltaics but also exemplifies the power of atomic-level defect engineering in driving next-generation energy solutions. As the global community intensifies its search for sustainable energy sources, innovations like this redefine what is possible in thin-film solar technology, transforming scientific insight into tangible environmental impact.
This research embodies a remarkable convergence of fundamental materials science and applied engineering, demonstrating how manipulating the atomic landscape can directly translate into substantial enhancements in device functionality. The deployment of vacancy engineering via magnesium doping heralds a profound shift in the strategies employed to conquer disorder in complex semiconductor systems, and it will undoubtedly inspire a wide array of future investigations aimed at achieving even greater efficiencies in CZTSSe and beyond.
With such advancements, the dream of cost-effective, scalable, and high-performance thin-film solar cells utilizing earth-abundant materials moves ever closer to reality, providing a critical stepping stone towards a cleaner, more sustainable energy future.
Subject of Research: Vacancy-enhanced cation ordering via magnesium doping to improve kesterite solar cell efficiency.
Article Title: Vacancy-enhanced cation ordering via magnesium doping to enable kesterite solar cells with 14.9% certified efficiency.
Article References:
Wang, J., Meng, F., Lou, L. et al. Vacancy-enhanced cation ordering via magnesium doping to enable kesterite solar cells with 14.9% certified efficiency. Nat Energy (2025). https://doi.org/10.1038/s41560-025-01902-w
Image Credits: AI Generated
DOI: https://doi.org/10.1038/s41560-025-01902-w
Tags: atomic disorder in crystalline materialscharge carrier extraction in solar technologiescontrolling cation disorder in photovoltaic devicescopper zinc tin sulfide selenidedefect engineering in solar cell materialsearth-abundant materials for solar energyenhancing photovoltaic technology efficiencyMagnesium doping in CZTSSe solar cellsnon-radiative recombination centers in solar cellsoptimizing thin-film solar cell performancepower conversion efficiency in CZTSSesustainable energy solutions with advanced materials
