In a groundbreaking development that could reshape the future of data storage, researchers at the newly established Institute of Science Tokyo have engineered a novel class of materials based on covalent organic frameworks (COFs) exhibiting unprecedented capabilities as platforms for non-volatile memory devices. These crystalline solids, remarkable for their exceptional thermal stability and molecular design, incorporate electric-field-responsive dipolar rotors embedded within a uniquely structured framework. This innovation promises to bridge the gap between molecular machine technology and high-density information storage, potentially surpassing existing memory technologies in both scalability and durability.
Traditional information recording media have evolved drastically over millennia—from the earliest clay tablets, to paper, compact discs, and ultimately semiconductor memories. As the demand for miniaturization and higher areal density intensifies, the physical elements encoding data continue to shrink to nanometric scales. Non-volatile memories, which retain information without power for extended periods, are indispensable in contemporary computing and data archival systems. Yet, conventional materials approach intrinsic physical boundaries, necessitating revolutionary approaches for overcoming limitations in size, speed, and stability.
Recent advances in molecular technology, particularly the design and synthesis of molecular machines and nanomachines, have revealed entities capable of precise mechanical motions at the molecular level. Among these, molecular rotors—molecules that rotate or flip around defined chemical bonds—present an intriguing avenue for encoding binary information through their orientation states. The potential to exploit such molecules for memory applications, leveraging their minimal dimensions and tailorability, has been a subject of intense research interest. However, achieving simultaneous control over their orientation, long-term stability, and unhindered rotational mobility within solid-state materials has remained a formidable challenge.
The breakthrough achieved by the Tokyo team centers on the strategic incorporation of dipolar rotors into a COF scaffold designed to circumvent prior limitations. To function effectively as memory elements, molecular rotors must meet three rigorous criteria: first, the presence of a permanent dipole moment to enable manipulation via external electric fields; second, thermal robustness ensuring their orientation remains stable at room and elevated temperatures; and third, sufficient spatial freedom within the solid matrix to allow controlled flipping without steric obstruction. Compounding these demands is the necessity for these materials to withstand operational temperatures up to 150°C, reflecting the harsh thermal environment encountered in computing devices.
Addressing these requisites, the researchers devised two novel COFs, denominated TK-COF-P and TK-COF-M, featuring a structural topology classified as “sln” — a geometry characterized by intrinsically low density and spacious three-dimensional connectivity. This topology, previously unreported among COFs, was crucial in providing the dipolar rotors with a sterically permissive environment facilitating reversible molecular rotations. The frameworks are constructed by covalently linking tetrahedral, four-armed molecular nodes with newly synthesized planar, three-armed linkers embedding alternating dipolar 1,2-difluorophenyl groups and aryl units rooted in a central benzene ring, an arrangement meticulously optimized to stabilize rotor orientation at ambient conditions.
Intriguingly, the researchers observed a remarkable shape dimorphism in these COFs, whereby crystallization conditions dictated the formation of either well-defined hexagonal prismatic crystals or extended membrane-like sheets. Such morphological versatility not only underscores the tunability of COF synthesis but may also bear implications for the integration and processability of these materials in device architectures. Moreover, X-ray crystallographic analysis elucidated the detailed framework geometry, validating the targeted sln topology and confirming the periodic distribution of dipolar rotors within the porous network.
From a thermal standpoint, the newly developed COFs exhibit extraordinary stability, maintaining structural integrity and functional rotor dynamics up to temperatures near 400°C—far exceeding the thermal thresholds typical of conventional semiconductor components. This resilience is a direct consequence of the robust covalent bonds constituting the framework and the minimized density afforded by the sln topology, which collectively mitigate thermal degradation and steric locking of the rotors.
Functionally, the dipolar rotors embedded within these COFs demonstrate the ability to flip orientation when subjected to sufficiently strong electric fields or elevated temperatures exceeding 200°C, yet retain their alignment for extended durations at room temperature. This bistable behavior is a quintessential characteristic for non-volatile information storage, where data represented by rotor orientation must remain stable in the absence of power yet be rewritable upon command. The low-density sln framework underpins this performance by minimizing steric hindrance—a critical factor that had previously hampered molecular rotor mobility within dense organic solids.
Professor Yoichi Murakami, leading the project, highlights the significance of their work not only in advancing molecular-machine-based memory materials but also in expanding the taxonomy of COF structures through the novel discovery of sln topology and shape dimorphism. These findings open avenues for further exploration into COF-based devices where molecular precision and solid-state durability coalesce.
Looking ahead, the implications of this research could be transformative. By harnessing the advantages of molecular scale components—vastly smaller than pits in compact discs or transistor features—these COFs offer a prospective path toward ultra-high-density data storage. The organic, modular nature of the materials affords extensive opportunities for chemical customization, potentially enabling tailored functionalities for specific memory applications or integration with existing semiconductor technologies.
While the current studies focus on demonstrating fundamental properties and material synthesis, subsequent developments will need to address scaling up production, device fabrication, and performance benchmarking against extant technologies. Success in these realms could herald the advent of molecular-machine-driven memories, reshaping the landscape of information technology with devices that are more compact, durable, and energy-efficient.
In essence, the pioneering efforts by the Institute of Science Tokyo exemplify how merging condensed matter chemistry, materials science, and molecular machinery can surmount longstanding barriers in data storage technology. Their innovation encapsulates the promise of COFs as versatile platforms where the dynamic behavior of molecular machines can be harnessed and controlled at the macroscopic scale, enabling new paradigms for information science in the coming decades.
Subject of Research:
Not applicable
Article Title:
sln-Topological Covalent Organic Frameworks with Shape Dimorphism and Dipolar Rotors
News Publication Date:
14-Aug-2025
Web References:
http://dx.doi.org/10.1021/jacs.5c10010
References:
Murakami, Y. et al., “sln-Topological Covalent Organic Frameworks with Shape Dimorphism and Dipolar Rotors,” Journal of the American Chemical Society, 2025.
Image Credits:
Yoichi Murakami
Keywords
Applied sciences and engineering; Materials engineering; Covalent organic frameworks; Diffraction
Tags: advancements in molecular rotorscovalent organic frameworksdata storage innovationselectric-field-responsive materialsfuture of data archival systemshigh-density information storagemolecular machines in computingnanometric memory technologynon-volatile memory technologyovercoming limitations in memory materialsscalable memory solutionsthermal stability in memory devices
