The relentless progression of modern technology has brought about an insatiable demand for electronic devices that can operate efficiently under extreme conditions. Among these, high-electron-mobility transistors (HEMTs) crafted from group-III nitride (III-nitride) materials have emerged as promising candidates for high-temperature electronic applications. These applications span across pivotal fields such as power electronics, high-frequency communications, aerospace engineering, and even the harsh environments encountered in space exploration. Understanding the thermal boundaries and behavior of III-nitride HEMTs under such arduous conditions becomes essential to harness their full potential.
Group-III nitrides, including gallium nitride (GaN), aluminum nitride (AlN), and their alloys, possess intrinsic properties that make them suitable for high-power and high-frequency device applications. Their wide bandgap, high breakdown voltage, and robust thermal conductivity render them inherently advantageous over traditional semiconductor materials like silicon and gallium arsenide. However, these materials are not immune to performance degradation when subjected to elevated temperatures, necessitating a thorough examination of how their electronic properties and device architecture evolve in such environments.
At the crux of high-temperature operation lies the interplay between the material properties and the device structure of III-nitride HEMTs. The two-dimensional electron gas (2DEG) formed at the heterointerface between layers such as AlGaN and GaN plays a pivotal role in the transistor’s high electron mobility and overall efficiency. Elevated temperatures can induce carrier scattering, reduce electron mobility, and alter the sheet carrier density, consequently impacting device performance. Additionally, thermal stresses may influence the structural integrity of the heterojunction and the device layers, further challenging reliable operation.
The engineering of critical device layers, particularly the barrier and channel layers, is integral to mitigating high-temperature effects. By fine-tuning the composition of the AlGaN barrier layer, the polarization-induced electric fields, and the thickness of the layers, researchers can manipulate the carrier concentration and mobility to achieve stable operation at elevated temperatures. Similarly, channel engineering, involving the optimization of the GaN layer properties and potential incorporation of novel materials, seeks to enhance the thermal robustness and reduce electron scattering mechanisms under thermal stress.
Substrate selection is another crucial factor influencing the thermal management and overall reliability of III-nitride HEMTs. Traditional substrates such as silicon carbide (SiC) offer superior thermal conductivity, facilitating efficient heat dissipation during high-power operation. However, substrates like sapphire and silicon, while cost-effective, present challenges due to their lower thermal conductivity. Current research delves into hybrid substrate designs and innovative bonding techniques that aim to combine thermal performance with manufacturability.
Passivation strategies—protective layers applied to the transistor surface—play an equally important role in stabilizing device performance at high temperatures. These layers prevent surface states and traps from deteriorating the channel conduction, which is especially critical when devices are exposed to harsh operating environments. Advanced passivation materials and deposition techniques are being explored to enhance surface stability and reduce leakage currents exacerbated by temperature-induced defects.
Evaluating the thermal stability of III-nitride HEMTs at the circuit level is essential for real-world application feasibility. High-temperature logic circuits require consistent switching characteristics with minimal threshold voltage drift, whereas radiofrequency (RF) applications demand stable gain and minimal noise figure degradation under thermal stress. Power electronics, tasked with converting and controlling high voltages and currents, must maintain efficiency without succumbing to thermal runaway or breakdown phenomena.
The investigation of device performance metrics across varying temperature ranges reveals complex degradation mechanisms. Mobility reduction, increased contact resistance, and threshold voltage shifts contribute to the decline in device efficacy. Advanced modeling and characterization tools now allow for in-depth analysis of these dynamics, offering insights into accelerating device design iterations tailored for thermal resilience.
Material interface engineering surfaces as a promising avenue to curb temperature-induced degradation. By introducing interlayers or modifying the grading between barrier and channel layers, strain and dislocation density—both critical factors influencing carrier mobility—can be tailored to withstand the mechanical and thermal stresses encountered during operation. This precise control over layer composition can unlock new performance thresholds previously unattainable in high-temperature regimes.
The exploration of alloy compositions within the III-nitride system affords additional levers for optimizing device thermal performance. Incorporating higher aluminum content in AlGaN barriers, for example, can enhance bandgap and polarization fields, improving electron confinement at elevated temperatures. However, this must be balanced against the potential for increased lattice mismatch and resultant defects, highlighting the delicate trade-offs inherent in material selection.
From a device reliability standpoint, understanding defect generation and migration mechanisms at high temperature is critical. Point defects, vacancies, and dislocations can accumulate or evolve under thermal stress, leading to trap states that degrade carrier transport. Ongoing research aims to develop fabrication processes and material treatments that minimize such defects or promote their passivation, extending device lifetimes even in demanding environments.
In the context of aerospace and space exploration, III-nitride HEMTs’ resilience to radiation and extreme thermal cycles is increasingly attracting attention. The harsh conditions found in space necessitate devices that not only endure high temperatures but also resist ionizing radiation. Studies focusing on radiation-hardening strategies combined with thermal management hold promise for extending the operational envelope of HEMTs in such missions.
As the technology matures, integrating III-nitride HEMTs into complex circuits and systems unveils new challenges and opportunities. Thermal management at the system level, including heat sinking, packaging materials, and cooling techniques, synergistically influences device performance and longevity. Holistic approaches combining material science, device engineering, and system integration are indispensable for translating laboratory successes into commercial applications.
Despite the significant advancements, several hurdles remain in the pathway toward widespread adoption of high-temperature III-nitride HEMTs. Cost constraints related to substrate materials and complex fabrication processes still hinder extensive commercialization. Moreover, achieving uniformity and reproducibility across large wafers while maintaining high performance under thermal stress remains a demanding pursuit for manufacturers and researchers alike.
Future directions in this field are poised to leverage artificial intelligence and machine learning for accelerated materials discovery and device optimization. Predictive modeling can enable rapid assessment of material combinations, device architectures, and fabrication parameters, streamlining the development cycle for high-temperature applications. Combined with experimental validations, such approaches can revolutionize the design landscape of III-nitride HEMTs.
Ultimately, the high-temperature operation of group-III nitride high-electron-mobility transistors stands at the intersection of cutting-edge materials science and electronics engineering. By delving deep into the thermal effects on material properties, device structures, and system-level behavior, research efforts are steadily pushing the boundaries to unlock new frontiers in electronic device performance. As these transistors become integral in power electronics, RF communication, aerospace, and beyond, they will redefine our capability to create resilient, efficient, and compact electronic systems fit for the future’s harshest environments.
Subject of Research: Thermal limits and high-temperature performance of group-III nitride high-electron-mobility transistors (HEMTs).
Article Title: High-temperature operation of group-III nitride high-electron-mobility transistors.
Article References:
Liu, YC., Zhu, J., Niroula, J. et al. High-temperature operation of group-III nitride high-electron-mobility transistors. Nat Electron (2026). https://doi.org/10.1038/s41928-026-01570-y
Image Credits: AI Generated
DOI: https://doi.org/10.1038/s41928-026-01570-y
Tags: 2DEG in AlGaN/GaN heterostructuresaerospace electronic componentsaluminum nitride (AlN) applicationsgallium nitride (GaN) devicesgroup-III nitride transistorshigh-electron-mobility transistors (HEMTs)high-frequency communication transistorshigh-power semiconductor deviceshigh-temperature device architecturehigh-temperature electronicsthermal stability of nitride transistorswide-bandgap semiconductors
