In a groundbreaking advancement poised to reshape the landscape of thin-film photovoltaic technology, researchers have unveiled a meticulously engineered Sb2(S,Se)3 solar cell that achieves a certified power conversion efficiency (PCE) of 10.7%. This accomplishment, detailed in the recent Nature Energy publication by Qian et al., marks a significant leap in harnessing the potential of antimony chalcogenide absorbers through the strategic regulation of hydrothermal synthesis parameters using sodium sulfide additives.
Central to this study is the precise determination of carrier concentrations within the Sb2(S,Se)3 absorber layers, a critical factor governing device performance. By deploying capacitance–voltage (C–V) profiling under variable voltage biases, the researchers established depletion widths of 317 nm for the conventional thermal (CT) sample and 262 nm for the sodium sulfide (SS) treated sample at zero bias. Intriguingly, these measured depletion widths corroborate well with the physical thicknesses observed via cross-sectional transmission electron microscopy (TEM), providing direct evidence that the absorber layers in both samples are entirely depleted. This insight is pivotal as full depletion ensures that the electrical characteristics measured genuinely represent the intrinsic properties of the absorber material rather than extrinsic interface effects.
Pushing the boundaries further, the experimental strategy incorporated the application of a positive bias (0.4 V) during C–V studies, deliberately shifting the depletion boundary deeper into the bulk absorber. This approach allowed the extraction of a more representative net carrier concentration intrinsic to the Sb2(S,Se)3 bulk material. Notably, the SS sample exhibited a substantial increase in carrier density, rising from 4.83 × 10^16 cm^−3 in the CT counterpart to 1.72 × 10^17 cm^−3. The augmentation is attributed to the effective suppression of deep-level defects facilitated by the sodium sulfide additive, which mitigates charge trapping and non-radiative recombination pathways that are notoriously detrimental to charge carrier lifetimes and transport.
This enhanced carrier profile directly translates to a decrease in the series resistance of the Sb2(S,Se)3 layer, fundamentally improving the hole transport dynamics within the absorber. The sodium sulfide treatment also eradicates an unfavorable valence band maximum (VBM) gradient, effectively flattening the band alignment and eliminating potential barriers that impede carrier flow. Collectively, these factors catalyze a remarkable uplift in the fill factor (FF) from 66.09% in CT devices to 69.02% in SS devices, underscoring the critical role of intrinsic material properties in optimizing photovoltaic performance.
Supplementing the electrical measurements, external quantum efficiency (EQE) spectra reveal nuanced improvements across the solar spectrum. At shorter wavelengths—where photons primarily generate carriers close to the CdS/Sb2(S,Se)3 interface—the elevated hole collection efficiency in SS devices emphasizes the beneficial impact of the improved band alignment and reduced bulk defects. Since holes act as minority carriers within the n-type Sb2(S,Se)3 absorber, their ability to traverse the entirety of the absorber layer without recombination is paramount. The accomplished near-interface control, combined with bulk defect passivation, substantially raises the EQE response.
Equally striking is the enhancement at longer wavelengths, where photons penetrate deeply into the absorber layer. Here, the suppression of deep-level recombination centers diminishes carrier losses, allowing more photogenerated electrons and holes to contribute to the photocurrent. The integrated short-circuit current density (Jsc) ascended from 22.35 mA cm^−2 in CT devices to an impressive 24.54 mA cm^−2 in SS devices, consistent with the Jsc values measured under standard AM 1.5G illumination conditions. This coherence between EQE integration and direct current–voltage (J–V) characterization affirms the reliability and reproducibility of the device metrics.
Importantly, while the Sb2(S,Se)3 absorber layer in SS devices is marginally thinner—an alteration typically associated with some voltage penalty—the enhanced material quality and improved electrical properties counterbalance this effect. As a result, the open-circuit voltage (Voc) exhibits negligible detriment, enabling the overall efficiency to attain a new milestone with a certified PCE exceeding 10%. This breakthrough is attributed primarily to the precise tuning of hydrothermal reaction kinetics via sodium sulfide, which refines the crystallinity, stoichiometry, and interface energetics of the absorber layer.
The implications of this research extend beyond efficiency metrics alone. The batch fabrication and statistical analysis of multiple devices revealed consistent trends across Voc, Jsc, FF, and PCE parameters, underscoring the repeatability and scalability of the sodium sulfide additive strategy. Such reproducibility addresses a central challenge in thin-film solar cell manufacturing—device-to-device variability—and hints at viable pathways toward commercial viability.
Fundamentally, this work illuminates the intricate interplay between material synthesis conditions, electronic properties, and device performance. By regulating the hydrothermal reaction environment, the team successfully reduced the density of sub-bandgap defect states—long considered a barrier to high-efficiency antimony chalcogenide photovoltaics. These defects serve as non-radiative recombination centers, trapping charges and hampering transport. Their suppression translates into lower series resistance and enhanced charge carrier mobility, culminating in devices with superior fill factors and quantum efficiency.
Moreover, the elimination of a detrimental valence band offset mitigates energetic barriers at critical interfaces, facilitating more effective hole extraction. This modification is particularly significant given the multi-layered nature of the devices, where interfacial band alignment dictates carrier dynamics and overall diode behavior. The work thus underscores the necessity of holistic optimization, encompassing bulk absorber quality and interface engineering.
This technical progression arrives within a broader context of the quest for cost-effective, earth-abundant, and scalable photovoltaic technologies. Sb2(S,Se)3—composed of environmentally benign constituents—has emerged as a promising candidate. However, the pathway to commercialization has been impeded by challenges in controlling defect chemistry and maintaining suitable band alignment under practical fabrication conditions. The sodium sulfide approach offers a compelling solution, combining straightforward chemical modulation with profound material benefits.
Beyond the immediate technological impact, this research is emblematic of advanced characterization techniques driving deep insights into photovoltaic material behavior. The adept use of capacitance–voltage profiling coupled with cross-sectional microscopy bridges structural and electronic perspectives, facilitating a comprehensive understanding of absorber layer dynamics under operational biases.
Equally, the correlation between device performance improvements and meticulous modification of synthesis chemistry emphasizes the potential of chemical additives as powerful levers in photovoltaic research. This approach transcends mere doping—it reflects a nuanced control over nucleation, growth, and defect passivation mechanisms during the hydrothermal process, delivering a paradigm for future exploration across a variety of chalcogenide and emerging photovoltaic materials.
In conclusion, the introduction of sodium sulfide into the hydrothermal synthesis of Sb2(S,Se)3 solar cells heralds a new era of efficiency and device stability, reaching a certified PCE of 10.7%. This work not only motivates further research into additive-driven defect management but also charts a path toward the scalable production of high-performance, environmentally sustainable solar absorbers. As the global demand for renewable energy escalates, advances of this caliber embolden the prospect of affordable, efficient solar electricity generation rooted in innovative materials science and chemistry.
Subject of Research:
Photovoltaic performance enhancement of Sb2(S,Se)3 solar cells through hydrothermal synthesis modification using sodium sulfide additives.
Article Title:
Regulation of hydrothermal reaction kinetics with sodium sulfide for certified 10.7% efficiency Sb2(S,Se)3 solar cells.
Article References:
Qian, C., Sun, K., Huang, J. et al. Regulation of hydrothermal reaction kinetics with sodium sulfide for certified 10.7% efficiency Sb2(S,Se)3 solar cells. Nat Energy (2026). https://doi.org/10.1038/s41560-025-01952-0
Image Credits: AI Generated
DOI: https://doi.org/10.1038/s41560-025-01952-0
Keywords:
Sb2(S,Se)3 solar cells, carrier concentration, hydrothermal synthesis, sodium sulfide additive, defect passivation, capacitance-voltage measurement, depletion region, band alignment, external quantum efficiency, power conversion efficiency, thin-film photovoltaics.
Tags: advancements in thin-film photovoltaic materialsantimony chalcogenide solar absorberscapacitance-voltage profiling in solar cellscarrier concentration measurement techniquesdepletion width analysis in solar absorberselectrical characteristics of solar absorbershydrothermal synthesis in thin-film solar cellsNature Energy publication on solar cellsoptimizing solar cell performancepower conversion efficiency in solar cellsSb2(SSe)3 solar cell technologysodium sulfide additive in photovoltaics
