Electric Fields Steer Spin Currents in Organic Device for Room-Temperature Spin Logic

Researchers have built a vertical organic spin–field device that lets electric fields directly control spin-polarized currents at room temperature, an advance they report in Nature Electronics. The work addresses a long-standing requirement for practical spin-based logic: electrical control over spin transport without sacrificing spin coherence.

Electron spin can serve as an information carrier in low-power and scalable computing technologies. Turning that potential into working logic circuits, however, demands that spin transport be modulated electrically while the spin signal survives at ambient temperatures.

The team, led by Lidan Guo and Xiangnan Sun with colleagues including Xianrong Gu, Cheng Zhang and Bin Tu, created an interface between an organic semiconductor and a nanoporous ferromagnet at which spin transport and the electric-field effect interact. This interaction is the core of the new device, which the authors call an OSF device.

By exploiting the spin–field interaction, the vertical architecture integrates two functionalities that are usually handled separately: spin transport and field-effect control. The device delivers fast and robust electrical modulation of spin-polarized currents at room temperature, according to the study.

A notable capability is the degree of control over the spin signal. The device offers spin polarization control across the full 0–100% range, meaning the spin polarization of the current can be tuned continuously from completely unpolarized to fully polarized. Figures accompanying the paper illustrate the construction of the OSF devices, the experimental demonstration of the spin–field interaction, and the spin-transport control it enables.

The researchers used the device to assemble a programmable molecular spin-logic platform. On this platform they implemented spin-logic gates and integrated arithmetic logic circuits, demonstrating that the electrically controlled spin transport can be translated into functional computing elements. A further figure depicts spin-based storage and transmission alongside the logic circuits enabled by the spin–field interaction.

The study appears in Nature Electronics and was published on 29 October 2026.

Subject of Research: Electric-field control of spin transport in a vertical organic spin–field device for room-temperature spin logic

Article Title: Electric-field-controlled spin transport in a vertical organic spin–field device for room-temperature spin logic

Article References: Guo, L., Gu, X., Zhang, C., Wang, Y., Hu, Y., Zhang, R., Hu, H., Chen, P., Qin, Y., Meng, K., Yang, T., Hu, S., Zhang, X., Zheng, R., Wu, M., Zhang, G., Tu, B., & Sun, X. (2026). Electric-field-controlled spin transport in a vertical organic spin–field device for room-temperature spin logic. Nature Electronics. https://doi.org/10.1038/s41928-026-01727-9

Image Credits: AI Generated

DOI: 10.1038/s41928-026-01727-9

Keywords: spintronics, organic semiconductors, spin transport, electric-field effect, spin logic, ferromagnet, room temperature, spin polarization, logic circuits, Nature Electronics, low-power computing, molecular spin-logic