In the relentless pursuit of smaller, faster, and more energy-efficient electronic devices, two-dimensional (2D) semiconductors have emerged as a transformative breakthrough. Yet, harnessing their full potential hinges on the ability to integrate ultra-thin dielectric layers with high dielectric constants, a feat that has remained a formidable challenge due to the inert and delicate nature of 2D material surfaces. Now, a groundbreaking study has unveiled a novel approach to overcome these hurdles by epitaxially growing single-crystalline antimony trioxide (Sb₂O₃) on 2D semiconductors, opening a new frontier for scalable and high-performance electronics.
Two-dimensional semiconductors like tungsten diselenide (WSe₂) and molybdenum disulfide (MoS₂) are lauded for their exceptional electrical properties and atomically thin profiles, making them ideal candidates for next-generation transistors and other electronic components. However, integrating these materials with traditional dielectric layers presents a significant bottleneck. Conventional dielectrics either require transfer processes that risk introducing defects or are challenging to grow directly on the inert surfaces of 2D materials, often resulting in poor interface quality and degraded device performance.
Addressing this critical issue, the research team devised an innovative van der Waals epitaxial growth process for Sb₂O₃, a material known for its promising dielectric characteristics. Their approach distinguishes itself by decoupling the nucleation and epitaxy phases via a two-step growth strategy. Initially, nucleation sites are precisely formed, allowing unidirectional Sb₂O₃ domains to develop. These domains subsequently grow and coalesce seamlessly into wide-area single-crystal films within an impressively short timeframe of less than two minutes, a breakthrough in both speed and uniformity.
The resultant Sb₂O₃ monolayer exhibits exceptional dielectric properties, including a dielectric constant of 6 and a remarkable breakdown field of approximately 11 MV/cm. Equally critical is the ultra-low interface trap density measured at 3.8 × 10¹⁰ cm⁻² eV⁻¹, which indicates a highly pristine interface conducive to efficient charge modulation and minimal electronic scattering. These characteristics collectively position Sb₂O₃ as a formidable competitor to traditional dielectrics for 2D electronic applications.
To translate material innovations into practical devices, the team fabricated top-gate field-effect transistors (FETs) using monolayer Sb₂O₃ atop bilayer WSe₂. The devices demonstrated subthreshold swings as low as 62 mV/decade, nearing the theoretical limit for energy-efficient switching, and exhibited on/off current ratios reaching 10⁶. Moreover, the gate leakage currents remained extraordinarily low, around 10⁻⁴ A/cm², underscoring the dielectric layer’s integrity and performance under operational conditions.
What sets this development apart is not just the exceptional electrical performance but also the scalability and reproducibility of the method. The researchers successfully produced arrays of 60 top-gate WSe₂ transistors with an impressive 95% yield, signaling the potential for high-volume manufacturing. Complementary logic inverters constructed from these components showcased a maximum voltage gain of 13 at a supply voltage of only 1 V, illustrating viable application in energy-sensitive logic circuits.
The significance of employing single-crystalline Sb₂O₃ as a dielectric cannot be overstated. Single-crystalline films inherently possess fewer grain boundaries and defects, factors that typically plague polycrystalline or amorphous dielectrics. This purity translates to more consistent electrical properties across large areas, critical for device reliability and uniformity in integrated circuits. Additionally, the van der Waals epitaxial technique leverages the weak interlayer forces characteristic of 2D materials, enabling coherent film growth without the lattice matching constraints common in traditional epitaxy.
The dielectric constant of 6 for monolayer Sb₂O₃ marks a notable improvement over commonly used 2D dielectric candidates, advancing the effective scaling of transistor gate dielectrics without compromising capacitance. This facilitates further miniaturization of transistor dimensions and reduction in power consumption, addressing key limitations in current semiconductor technology.
Moreover, the breakthrough could catalyze progress across a myriad of 2D material-based applications beyond logic devices. For example, ultra-thin dielectric films with high breakdown strengths are invaluable in sensors, energy storage elements, and optoelectronic devices where interface quality critically impacts performance. The low defect density interfaces achievable with epitaxial Sb₂O₃ may set a new standard for device efficiency and longevity.
The demonstrated sub-2-minute growth time for complete, uniform Sb₂O₃ films also points to economic feasibility in industrial settings. Rapid processing speeds lower manufacturing costs and enable integration into existing semiconductor fabrication lines. This contrasts sharply with previously developed approaches involving intricate and time-consuming transfer or deposition steps, which limit scalability.
The research further highlights the compatibility of Sb₂O₃ with multiple 2D semiconductor platforms, as successful epitaxial growth was validated on both WSe₂ and MoS₂ substrates. This versatility opens avenues for heterostructure engineering, combining varied materials for tailored electrical and optical properties in future device architectures.
While the dielectric properties are compelling, this work invites further exploration into long-term stability and reliability under diverse environmental and operational stresses. Subsequent studies may delve into thermal stability, resistance to bias stress, and integration with metal contacts, all essential for commercial viability.
In essence, this research marks a turning point by overcoming a prominent challenge in 2D electronics: integrating high-quality, atomically thin dielectrics directly on inert 2D semiconductor surfaces without sacrificing performance or scalability. The epitaxially grown single-crystalline Sb₂O₃ films herald a new era where ultrathin, high-k dielectrics can be reliably employed in ever-smaller electronic devices with improved efficiency and speed.
As the semiconductor industry approaches the physical limits of silicon-based transistors, advances such as these will be pivotal in maintaining the momentum of Moore’s Law through innovative materials science and engineering. The direct growth of Sb₂O₃ on 2D materials blends fundamental physics, chemistry, and cutting-edge nanofabrication to unlock unprecedented capabilities in next-generation nanoelectronics.
With these promising results, widespread adoption of Sb₂O₃ dielectrics in commercial 2D electronic devices may soon be within reach, fueling breakthroughs in everything from ultra-low-power computing to flexible and wearable electronics. This represents a significant stride toward the scalable, high-performance 2D electronic technology that has long been envisioned but remained elusive.
In conclusion, the van der Waals epitaxial growth of single-crystalline antimony trioxide epitomizes a powerful strategy to conquer critical barriers in 2D semiconductor integration. By delivering high dielectric constants, exceptional interface quality, rapid processing, and scalable device performance, this work sets a new benchmark, propelling two-dimensional electronics closer to widespread practical realization.
Subject of Research: Two-dimensional semiconductor electronics, dielectric materials, epitaxial growth of high-k dielectrics.
Article Title: Epitaxially grown single-crystalline antimony trioxide dielectrics for two-dimensional electronics.
Article References:
Zhang, Z., Zhang, Z., Saeed, M.Z. et al. Epitaxially grown single-crystalline antimony trioxide dielectrics for two-dimensional electronics. Nat Electron (2026). https://doi.org/10.1038/s41928-026-01580-w
Image Credits: AI Generated
DOI: https://doi.org/10.1038/s41928-026-01580-w
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