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		<title>Surface States Hold the Key to Diamond&#8217;s Elusive n-Type Electron Gas</title>
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		<pubDate>Mon, 19 Oct 2026 07:31:27 +0000</pubDate>
				<category><![CDATA[Technology]]></category>
		<category><![CDATA[cubic boron nitride]]></category>
		<category><![CDATA[diamond]]></category>
		<category><![CDATA[donor surface states]]></category>
		<category><![CDATA[field-effect transistors]]></category>
		<category><![CDATA[heterostructure]]></category>
		<category><![CDATA[high-temperature electronics]]></category>
		<category><![CDATA[Journal of Materials Science]]></category>
		<category><![CDATA[n-type doping]]></category>
		<category><![CDATA[polarization charges]]></category>
		<category><![CDATA[TCAD simulation]]></category>
		<category><![CDATA[two-dimensional electron gas]]></category>
		<category><![CDATA[wide band gap semiconductors]]></category>
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					<description><![CDATA[Simulations reveal that the energy level of donor surface states, rather than their density, governs the two-dimensional electron gas at c-BN/diamond interfaces, with polarization charges and rising temperatures boosting carrier robustness for high-power electronics.]]></description>
		
		
		
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