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	<title>subthreshold swing &#8211; BIOENGINEER.ORG</title>
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	<title>subthreshold swing &#8211; BIOENGINEER.ORG</title>
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		<title>Where Interface Traps Strike Hardest: New Study Maps the Reliability Weak Spot of a Germanium Tunnel Transistor</title>
		<link>https://bioengineer.org/where-interface-traps-strike-hardest-new-study-maps-the-reliability-weak-spot-of-a-germanium-tunnel-transistor/</link>
		
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		<pubDate>Sat, 17 Oct 2026 16:00:38 +0000</pubDate>
				<category><![CDATA[Technology]]></category>
		<category><![CDATA[band-to-band tunneling]]></category>
		<category><![CDATA[Debye screening]]></category>
		<category><![CDATA[Germanium source]]></category>
		<category><![CDATA[hetero-dielectric double gate]]></category>
		<category><![CDATA[interface traps]]></category>
		<category><![CDATA[low-power electronics]]></category>
		<category><![CDATA[reliability]]></category>
		<category><![CDATA[subthreshold swing]]></category>
		<category><![CDATA[TFET]]></category>
		<category><![CDATA[trap-assisted tunneling]]></category>
		<category><![CDATA[tunnel field-effect transistor]]></category>
		<category><![CDATA[variability analysis]]></category>
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					<description><![CDATA[A statistical reliability study of a Germanium-source hetero-dielectric double gate tunnel FET reveals that channel-localized interface traps slash electron velocity by 42 percent while the heavily doped pocket region remains electrostatically immune to trap-induced degradation.]]></description>
		
		
		
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