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		<title>III-nitride sensor-memristor uses interfacial polarization for in-sensor computing</title>
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				<category><![CDATA[Technology]]></category>
		<category><![CDATA[carrier separation]]></category>
		<category><![CDATA[CMOS integration]]></category>
		<category><![CDATA[heterostructures]]></category>
		<category><![CDATA[high-temperature electronics]]></category>
		<category><![CDATA[III-nitride semiconductors]]></category>
		<category><![CDATA[in-sensor computing]]></category>
		<category><![CDATA[Nature Materials]]></category>
		<category><![CDATA[optoelectronics]]></category>
		<category><![CDATA[photodetector]]></category>
		<category><![CDATA[polarization]]></category>
		<category><![CDATA[responsivity]]></category>
		<category><![CDATA[sensor-memristor]]></category>
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					<description><![CDATA[A III-nitride sensor-memristor that uses interfacial polarization to separate photogenerated carriers achieves nanowatt-level light sensitivity, 10^6 A/W responsivity and 300 °C tolerance for in-sensor computing.]]></description>
		
		
		
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