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		<title>Single Germanium-Telluride Material Yields Both Memory Cell and Selector</title>
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		<pubDate>Wed, 28 Oct 2026 02:07:39 +0000</pubDate>
				<category><![CDATA[Technology]]></category>
		<category><![CDATA[1S1R cross-point array]]></category>
		<category><![CDATA[chalcogenide]]></category>
		<category><![CDATA[endurance]]></category>
		<category><![CDATA[germanium telluride]]></category>
		<category><![CDATA[neuromorphic computing]]></category>
		<category><![CDATA[phase-change memory]]></category>
		<category><![CDATA[Raman spectroscopy]]></category>
		<category><![CDATA[selectors]]></category>
		<category><![CDATA[storage-class memory]]></category>
		<category><![CDATA[thin films]]></category>
		<category><![CDATA[threshold switching]]></category>
		<category><![CDATA[XPS]]></category>
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					<description><![CDATA[Researchers built a monolithic one-selector one-resistor cross-point memory device from a single GexTe1-x material system, tuning its composition to switch between memory and threshold switching behavior.]]></description>
		
		
		
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