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	<title>residual strain &#8211; BIOENGINEER.ORG</title>
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		<title>Al2O3 Buffer Layer Separates Strain from Interface Effects in Crystallized Ge Films</title>
		<link>https://bioengineer.org/al2o3-buffer-layer-separates-strain-from-interface-effects-in-crystallized-ge-films/</link>
		
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		<pubDate>Mon, 26 Oct 2026 23:48:55 +0000</pubDate>
				<category><![CDATA[Technology]]></category>
		<category><![CDATA[Al2O3 buffer layer]]></category>
		<category><![CDATA[atomic layer deposition]]></category>
		<category><![CDATA[electron backscatter diffraction]]></category>
		<category><![CDATA[germanium thin films]]></category>
		<category><![CDATA[Hall effect]]></category>
		<category><![CDATA[hole mobility]]></category>
		<category><![CDATA[Interface engineering]]></category>
		<category><![CDATA[Raman spectroscopy]]></category>
		<category><![CDATA[residual strain]]></category>
		<category><![CDATA[solid-phase crystallization]]></category>
		<category><![CDATA[thermal expansion mismatch]]></category>
		<category><![CDATA[X-ray diffraction]]></category>
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					<description><![CDATA[A 20-nm atomic-layer-deposited Al2O3 buffer layer allowed researchers to separate substrate-induced strain from interfacial effects in solid-phase-crystallized germanium thin films, revealing that the local interface governs hole transport on sapphire, silicon, and quartz alike.]]></description>
		
		
		
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