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		<title>High-Frequency Power Amplification with Amorphous Indium Tin Oxide</title>
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		<pubDate>Sun, 12 Oct 2025 11:14:46 +0000</pubDate>
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		<category><![CDATA[Amorphous indium tin oxide]]></category>
		<category><![CDATA[high-frequency power amplification]]></category>
		<category><![CDATA[next-generation wireless communication]]></category>
		<category><![CDATA[silicon carbide substrate]]></category>
		<category><![CDATA[thermal management in electronics]]></category>
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					<description><![CDATA[Amorphous oxide semiconductors have recently emerged as promising candidates for use in advanced electronics, specifically as thin channel materials in back-end-of-line processes. These types of materials offer significant advantages, including flexibility and reduced thickness, making them suitable for modern high-performance devices. However, despite their potential, they also present significant challenges, most notably Joule heating. This [&#8230;]]]></description>
		
		
		
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