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	<title>field-effect transistor &#8211; BIOENGINEER.ORG</title>
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		<title>Doped oxide semiconductor shatters records with colossal 7-electronvolt bandgap</title>
		<link>https://bioengineer.org/doped-oxide-semiconductor-shatters-records-with-colossal-7-electronvolt-bandgap/</link>
		
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		<pubDate>Thu, 08 Oct 2026 01:58:29 +0000</pubDate>
				<category><![CDATA[Health]]></category>
		<category><![CDATA[Technology]]></category>
		<category><![CDATA[alpha-gallium oxide]]></category>
		<category><![CDATA[aluminum gallium oxide alloy]]></category>
		<category><![CDATA[Baliga figure of merit]]></category>
		<category><![CDATA[colossal-bandgap semiconductor]]></category>
		<category><![CDATA[field-effect transistor]]></category>
		<category><![CDATA[molecular beam epitaxy]]></category>
		<category><![CDATA[power electronics]]></category>
		<category><![CDATA[sapphire substrate]]></category>
		<category><![CDATA[Schottky diode]]></category>
		<category><![CDATA[silicon doping]]></category>
		<category><![CDATA[suboxide molecular-beam epitaxy]]></category>
		<category><![CDATA[wide-bandgap materials]]></category>
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					<description><![CDATA[Researchers have grown silicon-doped α-(AlxGa1−x)2O3 films with bandgaps exceeding 7 electronvolts and conductivities over 100 million times higher than any previous colossal-bandgap material, and used them to build a working diode and transistor on inexpensive sapphire.]]></description>
		
		
		
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