<?xml version="1.0" encoding="UTF-8"?><rss version="2.0"
	xmlns:content="http://purl.org/rss/1.0/modules/content/"
	xmlns:wfw="http://wellformedweb.org/CommentAPI/"
	xmlns:dc="http://purl.org/dc/elements/1.1/"
	xmlns:atom="http://www.w3.org/2005/Atom"
	xmlns:sy="http://purl.org/rss/1.0/modules/syndication/"
	xmlns:slash="http://purl.org/rss/1.0/modules/slash/"
	>

<channel>
	<title>complementary logic &#8211; BIOENGINEER.ORG</title>
	<atom:link href="https://bioengineer.org/tag/complementary-logic/feed/" rel="self" type="application/rss+xml" />
	<link>https://bioengineer.org</link>
	<description>Bioengineering</description>
	<lastBuildDate>Sun, 25 Oct 2026 02:38:44 +0000</lastBuildDate>
	<language>en-US</language>
	<sy:updatePeriod>
	hourly	</sy:updatePeriod>
	<sy:updateFrequency>
	1	</sy:updateFrequency>
	<generator>https://wordpress.org/?v=7.1.3</generator>

<image>
	<url>https://bioengineer.org/wp-content/uploads/2019/09/cropped-bioengineering-32x32.png</url>
	<title>complementary logic &#8211; BIOENGINEER.ORG</title>
	<link>https://bioengineer.org</link>
	<width>32</width>
	<height>32</height>
</image> 
<site xmlns="com-wordpress:feed-additions:1">72741379</site>	<item>
		<title>One Oxide, Two Polarities: Electrochemical Gating Turns SnO Into SnO2 for Complementary Logic</title>
		<link>https://bioengineer.org/one-oxide-two-polarities-electrochemical-gating-turns-sno-into-sno2-for-complementary-logic/</link>
		
		<dc:creator><![CDATA[]]></dc:creator>
		<pubDate>Sun, 25 Oct 2026 02:38:44 +0000</pubDate>
				<category><![CDATA[Technology]]></category>
		<category><![CDATA[atomic layer deposition]]></category>
		<category><![CDATA[complementary logic]]></category>
		<category><![CDATA[electrochemical doping]]></category>
		<category><![CDATA[electrolyte-gated transistor]]></category>
		<category><![CDATA[inverter]]></category>
		<category><![CDATA[ionogel]]></category>
		<category><![CDATA[NAND gate]]></category>
		<category><![CDATA[oxide semiconductors]]></category>
		<category><![CDATA[polarity control]]></category>
		<category><![CDATA[SnO2]]></category>
		<category><![CDATA[thin-film electronics]]></category>
		<category><![CDATA[tin oxide]]></category>
		<guid isPermaLink="false">https://bioengineer.org/?p=452747</guid>

					<description><![CDATA[Researchers used ionogel electrolyte gating to electrochemically convert p-type tin oxide transistors into n-type SnO2 devices, enabling inverters, NAND and NOR gates built from a single semiconductor layer.]]></description>
		
		
		
		<post-id xmlns="com-wordpress:feed-additions:1">452747</post-id>	</item>
	</channel>
</rss>
